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| Ordering number : ENA1355 2SK4227JS SANYO Semiconductors DATA SHEET 2SK4227JS Features * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 75 20 48 192 2.0 35 150 --55 to +150 100 48 Unit V V A A W W C C mJ A Note : *1 VDD=30V, L=50H, IAV=48A *2 L50H, Single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS IGSS Conditions ID=1mA, VGS=0V VDS=75V, VGS=0V VGS=16V, VDS=0V Ratings min 75 1 10 typ max Unit V A A Marking : K4227 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network D0308QA MS IM TC-00001755 No. A1355-1/5 2SK4227JS Continued from preceding page. Parameter Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=1mA VDS=10V, ID=24A ID=24A, VGS=10V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=30V, VGS=10V, ID=48A VDS=30V, VGS=10V, ID=48A VDS=30V, VGS=10V, ID=48A IS=48A, VGS=0V Ratings min 2 21 35 10.5 5400 480 350 61 220 240 150 100 30 28 0.9 1.2 13.7 typ max 4 Unit V S m pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7525-002 10.0 3.5 4.5 2.8 3.2 16.0 3.6 7.2 1.6 1.2 14.0 0.75 123 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML(LS) 2.55 2.55 Switching Time Test Circuit VIN VDD=30V 2.4 Avalanche Resistance Test Circuit 10V 0V L VIN ID=24A RL=1.25 D VOUT 2SK4227JS G 10V 0V 2SK4227JS 50 VDD 50 PW=10s D.C.1% P.G 50 S No. A1355-2/5 2SK4227JS 160 140 120 100 80 60 40 20 0 ID -- VDS 10 V Tc=25C 8V 7V 100 90 80 ID -- VGS Tc= --2 5C 75C 25 7 IT14149 150 IT14151 1.4 IT14153 30 IT14155 VDS=10V Drain Current, ID -- A Drain Current, ID -- A 6V 70 60 50 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 IT14148 0 0 1 2 3 25 C 4 --25 C Tc= 7 VGS=5V 5C 5 6 Drain-to-Source Voltage, VDS -- V 30 28 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 30 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 26 24 22 20 18 16 14 12 10 8 6 4 4 5 6 7 8 9 10 IT14150 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=24A Single pulse Single pulse 25 20 15 Tc=75C = V GS 10 =24 , ID 10V A 25C --25C 5 0 --50 --25 0 25 50 75 100 125 Gate-to-Source Voltage, VGS -- V 7 | yfs | -- ID Case Temperature, Tc -- C 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 IS -- VSD Forward Transfer Admittance, | yfs | -- S 5 3 2 10 7 5 3 2 1.0 VDS=10V VGS=0V Single pulse 5C 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 0.2 0.4 Tc= 7 0.6 --25 C 25C C -25 =Tc C 75 Source Current, IS -- A C 25 0.8 1.0 1.2 Drain Current, ID -- A 7 5 IT14185 10000 7 5 SW Time -- ID Ciss, Coss, Crss -- VDS Ciss Diode Forward Voltage, VSD -- V VDD=30V VGS=10V td(off) f=1MHz Switching Time, SW Time -- ns Ciss, Coss, Crss -- pF 3 2 3 2 tf 100 7 5 1000 7 5 3 2 100 tr Coss Crss td(on) 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 5 10 15 20 25 Drain Current, ID -- A IT14154 Drain-to-Source Voltage, VDS -- V No. A1355-3/5 C 2SK4227JS 10 9 VGS -- Qg VDS=30V ID=48A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 7 5 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=192A ID=48A 10 m PW10s 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 IT14156 10 1m s 10 s 0 s s 10 DC 0m Operation in s op era this area is tio n limited by RDS(on). 0.1 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 40 PD -- Tc 5 7 100 IT14157 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 35 30 25 20 15 10 5 0 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 120 EAS -- Ta IT14158 Case Temperature, Tc -- C IT14159 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT14160 Ambient Temperature, Ta -- C No. A1355-4/5 2SK4227JS Note on usage : Since the 2SK4227JS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1355-5/5 |
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